Bandgap modulations and promoted carrier separation in crystalline g-C3N4 thin films via chemical vapor deposition

Abstract

The preparation of high-quality graphite-like phase carbon nitride (g-C3N4) films is challenging, which limits the potential optoelectronic and photocatalytic applications. Here, we report the growth of crystalline g-C3N4 films with thicknesses of approximately 100–200 nm on the indium tin oxide substrates by chemical vapor deposition. The films show high crystalline quality and uniformity as suggested by the appearance of interference fringes in the transmission spectra and the existence of exciton peak. The optimized growth conditions for high-quality g-C3N4 films deposition have been obtained through combined optical characterizations and detailed electronic structure analyses using x-ray spectroscopies. The as-grown g-C3N4 films exhibit a bandgap value of 3.05 eV as well as an enhanced fluorescence lifetime of ∼12.43 ns. By adding thiourea to the melamine precursors, N vacancies have been formed in the main heptazine structure, achieving the modulation of the bandgap and the promoted carrier separation. This work provides guidelines for understanding the property–structure relationships during g-C3N4 film deposition. The deposition of high crystallinity g-C3N4 films therein further extends the applications in the fields of optoelectronic and photocatalytic devices.