Abstract
Since the introduction of Germanium in Silicon Bipolar transistors, and more recently the introduction of Carbon, the base bandgap of SiGe:C heterojunction Bipolar transistors have been engineered to enhance device performance, thereby making them suitable for a wide range of high speed analog and RF applications
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
