Abstract
1. On ground ends of silicon filamentary crystals prepared by the chemical transport reaction method in a closed system, a periodic system of impurity bands has been found, parallel to type {211} planes. 2. The bands discovered are unambiguously related to steps on the side faces of FC; they extend inside the crystal parallel to each other from incoming corners of all the steps. 3. The experimental data described confirm the two-stage growth model of filamentary crystals.
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