Abstract
AbstractA dual‐band three‐mode low‐noise amplifier was demonstrated by using 0.35‐μm SiGe BiCMOS technology. For dual‐band applications, a band switching matching network controlled by MOSFET switches was introduced. Through setting On/off of two MOSFET switches, the proper matching networks were arranged at either 2‐ or 5‐GHz band for dual‐band three‐mode LNA design. The fabricated chip was measured on an FR‐4 in 2.4‐, 5.2‐, and 5.8‐GHz bands, which achieved a power gain better than 15 dB, a noise figure of 4.2 dB, input/output return losses of 9 dB, and an input P1dB of −23.5 dBm. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 2717–2721, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22840
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