Band structure effects on the transient electron transport in wurtzite InN

Abstract

The transient regime of electron transport in wurtzite InN subjected to applied electric fields in the Γ– A and Γ– M directions is calculated. The strength of the electron drift velocity overshoot effect is shown to be substantially dependent on the field direction, being stronger in the latter than in the former. This behavior is explained on the basis of the energy dependence of the band structure flattening, which is weaker in the Γ– A than in the Γ– M direction, and gives rise to a heavier average effective mass.