Abstract
Spin-filtering properties are investigated in magnetic tunnel junctions (MTJs) utilizing anti-reflective (AR) regions idea. The β−Ga2O3 semiconductors are embedded as quantum wells in the A-RMTJs. The results show a full spin-filtering feature and an ultrahigh tunnel-magnetoresistance (TMR) ratio contrasted to those in the single-barrier MTJs as a result of the band-pass transmission in the A-RMTJs. Therefore, it can be designed an excellent spin-filter device as well as improved MRAMs in the field of spintronics.
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