Abstract
In current report, X-ray photoelectron spectroscopy has been pursued to obtain the valence band discontinuity (ΔEv) of sputter deposited HfTiO/InZnGaO4 (IGZO) heterostructures. A ΔEv value of 0.32±0.1eV was obtained by using the Ga 2p3/2, Zn 2p3/2, and In 3d5/2 energy levels as references. Taking into consideration the experimental band gaps of 5.35eV and 3.39eV for HfTiO and IGZO thin films measured by absorption method, respectively, this would result in a conduction band offset of 1.64eV in this heterostructure.
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