Abstract
The valence band discontinuity (ΔEV) of sputter deposited HfO2/InZnGaO4 (IGZO) heterostructures was obtained from x-ray photoelectron spectroscopy measurements. The HfO2 exhibited a bandgap of 6.07 eV from absorption measurements. A value of ΔEV = 0.48 ± 0.025 eV was obtained by using the Ga 2p3/2, Zn 2p3/2, and In 3d5/2 energy levels as references. This implies a conduction band offset ΔEC of 2.39 eV in HfO2/InGaZnO4 heterostructures and a nested interface band alignment.
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