Abstract

We report the growth of thin pseudomorphic GaAs1−xSbx (x∼0.3) quantum-well heterostructures by metal-organic chemical vapor deposition and the measurement of the band lineups for the heterointerface of GaAs1−xSbx (x∼0.3) quantum wells with GaAs, GaAs0.86P0.14, and In0.5Ga0.5P quantum-well barriers for 80Å double-quantum-well heterostructures using excitation-dependent cathodoluminescence measurements at 10K. GaAs1−xSbx (x∼0.3) quantum wells with GaAs and GaAs0.86P0.14 barriers show type-II band alignment, while GaAs1−xSbx (x∼0.3) quantum wells with In0.5Ga0.5P barriers exhibit a type-I band lineup. The type-I/type-II band alignment boundary condition as a function of the GaAs1−xSbx quantum-well composition and of the barrier materials and compositions is calculated. The pseudomorphic GaAs1−xSbx∕GaAs quantum-well heterointerface is estimated to have a type-II alignment. For GaAs1−xSbx∕GaAsP and GaAs1−xSbx∕InGaP heterostructures, both type-I and type-II alignments can occur depending on the quantum-well and barrier compositions. As the Sb composition of the quantum well increases, higher P alloy composition (in GaAsP barriers) and Ga (in InGaP barriers) composition are required in order to make the type-II to type-I transition.

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