Abstract
InGaN/GaN multiple quantum wells have been grown on silicon-(001) substrate with specially designed composite intermediate layers with single or double GaN/AlxGa1—xN (x = 0.2) multilayered buffers by metal-organic chemical vapor deposition and characterized by photoluminescence spectroscopy. It was found that InGaN/GaN multiple quantum wells grown on composite intermediate layers with double multilayered buffers gave narrower and enhanced InGaN quantum well-related excitonic emission, and suppressed GaN band-edge-related emission as compared with those samples grown over single multilayered buffer under identical reactor configuration and growth conditions. This fact indicates that by using the proposed composite intermediate layers with double multilayered buffers, the crystalline quality of the InGaN/GaN multiple quantum wells grown on a silicon substrate can be significantly improved.
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