Abstract
Band lineups of high-k dielectrics such as atomic layer deposition (ALD) grown HfO2 and Al2O3 with different thicknesses on SiO2/Si stack are investigated by X-ray photoelectron spectroscopy (XPS). The band offsets at HfO2/SiO2, Al2O3/SiO2 and SiO2/Si interfaces are found to vary with physical thickness of high-k dielectric. Concepts of gap states and charge neutrality level (CNL) are employed to discuss band lineup of high-k/SiO2/Si stack. The observed XPS results are interpreted and attributed to lower CNLs of HfO2 and Al2O3 than SiO2/Si stack, indicating feasibility of gap state based theory in investigating band lineup of oxide/semiconductor and oxide/oxide heterojunctions.
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