Band alignment of high-k dielectric on SiO&lt;inf&gt;2&lt;/inf&gt;/Si stack

Jinjuan Xiang Jinjuan Xiang,Junfeng Li Junfeng Li,Dapeng Chen Dapeng Chen,Chao Zhao Chao Zhao,Tingting Li Tingting Li,Xiaolei Wang Xiaolei Wang,Tianchun Ye Tianchun Ye,Wenwu Wang Wenwu Wang

doi:10.1109/iwjt.2012.6212847

Band alignment of high-k dielectric on SiO<inf>2</inf>/Si stack

Jinjuan Xiang Jinjuan Xiang, Junfeng Li Junfeng Li + Show 6 more

https://doi.org/10.1109/iwjt.2012.6212847

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Publication Date: May 1, 2012

Affiliation: State Key Laboratory on Integrated Optoelectronics, Chinese Academy of Sciences

#Si Stack #Charge Neutrality Level + Show 8 more

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Abstract

Band alignments of high-k dielectrics such as atomic layer deposition (ALD) grown HfO 2 and Al 2 O 3 with different thicknesses on SiO 2 /Si stack are investigated by X-ray photoelectron spectroscopy (XPS). The band offsets at HfO 2 /SiO 2 , Al 2 O 3 /SiO 2 and SiO 2 /Si interfaces are found to vary with physical thickness of high-k dielectric. Concepts of gap states and charge neutrality level (CNL) are employed to discuss band lineup of high-k/SiO 2 /Si stack. The XPS observed results are successfully interpreted and attributed to lower CNLs of HfO 2 and Al 2 O 3 related to that of SiO 2 /Si stack, indicating feasibility of gap state based theory in investigating band alignment of oxide/semiconductor and oxide/oxide heterojunctions.

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