Abstract
The subband dependent band gap renormalization of optically excited semiconductor quantum wells is studied here. The first order self energies for this two component electron-hole system are calculated fully within the Random Phase Approximation. All interactions are included, and the intersubband terms are found to make significant contributions to the self energies. These calculations are made for realistic systems with finite well widths, finite barrier heights and finite temperatures. The results are compared with recent experimental data for InGaAs/InP and GaAs/GaAlAs quantum wells.
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