Band gap renormalization in a GaAs-Ga 1−xAl xAs modulation doped quantum well

Abstract

The electron density of a high-mobility 150 Å thick GaAs-Ga 1−xAl xAs one-side modulation doped quantum well can be monitored by illumination with energetic photons or by applying a weak in-plane electric field. The energy of the band to band transition and the carrier density are measured simultaneously by low temperature photoluminescence and photoluminescence excitation spectroscopy experiments. The comparison with the results of a self-consistent calculation in the Hartree approximation gives the density dependence of the band gap renormalization.