Abstract
A high-quality completely relaxed SiGe buffer layer is grown on Si(100) by gas-source molecular-beam epitaxy. A pseudomorphic Si layer is grown on this relaxed SiGe buffer to form SiGe/strained-Si/SiGe type-II (staggered) quantum wells. Intense band-edge photoluminescence is observed from these quantum wells for the first time. The quantum confinement effect in SiGe/strained-Si/SiGe type-II quantum wells is demonstrated from the systematic shift of photoluminescence energy peaks with the width of the quantum well. Transitions from the strained-Si quantum well are identified as radiative recombination of excitons, which are confined into the quantum well.
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