Abstract
The near-band-edge dynamics of unintentionally doped ZnSe crystals is studied by means of time-resolved picosecond luminescence spectroscopy in the range of temperatures 10--55 K. The temporal evolution of the luminescence from excitons bound to the Cu neutral acceptor and from free excitons, together with its variation with the temperature, allows us to get information on the electron and hole capture dynamics and on the bound-exciton formation. The experimental results show that the exciton formation is a two-step process with the capture of the hole first and of the electron next, and the carrier trapping times can be determined with the aid of a simple model. In addition it is found that the quenching of the bound-exciton luminescence at high temperatures is mainly due to the thermally activated process of free-exciton formation.
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