Abstract
We performed low temperature photoluminescence excitation and photocurrent measurements on tensile and compressively strained GaxIn1−xAs quantum-well layers grown on GaInAsP, which was lattice matched to the InP substrate. From these measurements the excitonic transitions in the unstrained and strained samples can be identified. We determine the effective masses in growth direction GaxIn1−xAs (0.3<xGa<0.6) and the band offsets of the GaxIn1−xAs/GaInAsP heterojunction (0.4<xGa<0.6).
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