Band coupling model of electron and hole mediated ferromagnetism in semiconductors: the case of GaN

Abstract

Transition metal (TM) doped diluted magnetic semiconductors (DMSs) have many unique physical properties that can be used for magneto-optical and spintronic applications. The DMSs exhibit a wide range of magnetic ordering behavior. For example, Mn doped GaN can be either ferromagnetic or antiferromagnetic, depending on the Mn concentration, carrier density, or pressure. A unified band coupling model based on the <i>p</i>-<i>d</i> and <i>d</i>-<i>d</i> level repulsions between the TM and host elements are developed to explain the hole-induced ferromagnetism. We show that kinetic <i>s</i>-<i>d</i> coupling can be introduced through chemical ordering and strain, thus leading to electron-mediated ferromagnetism. Moreover, by using rare-earth elements (e.g., Gd) as magnetic dopants, the symmetry-allowed <i>s-f</i> coupling can also lead to a large splitting at the conduction band edge, producing electron-mediated ferromagnetism. Our model, therefore, provides a simple guideline for future band structure engineering of magnetic semiconductors.