Abstract
In a recent paper Hecht pointed out the influence of photovoltaic band flattening on photoemission measurements of Schottky barrier formation [M. H. Hecht, J. Vac. Sci. Technol. B 8, 1018 (1990)]. He further suggested that the low‐temperature (LT) overshoot observed on high‐doped p‐GaAs is due to photon‐induced charging of the GaAs surface. In this paper we evaluate this hypothesis based on a variety of LT band bending data. We conclude that the charging hypothesis fails to explain the following key aspects of the overshoot data. (1) The overshoot is dependent on the temperature of the interface formation and its influence on adatom clustering rather than the temperature at which the measurement is made. (2) The degree of overshoot has a simple dependence on the adatom ionization potential and electronegativity. (3) The overshoot is observed on very high doped substrates in which tunneling is anticipated to restore any nonequilibrium surface charge. A model involving adsorbate‐induced donor states at the overshoot level in the gap provides a more straightforward and complete explanation of these and other aspects of the overshoot data.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
