Abstract
Abstract Hf1-xZrxO2 films have attracted significant attention for applications in ferroelectric memory and negative capacitance transistors due to their ferroelectric properties and high compatibility to CMOS integration. X-ray photoelectron spectroscopy (XPS) was utilized to characterize the energy band alignments of Hf1-xZrxO2/Si and bandgaps of Hf1-xZrxO2 with different Zr compositions. Results show with the increment of Zr composition in Hf1-xZrxO2 from 0 to 1, the valence band offset ΔEv for Hf1-xZrxO2/Si interfaces increases from 2.09 to 2.94 eV, while the conduction band offset ΔEc decreases from 2.37 to 1.06 eV. This is resulted from the increasing Zr composition leading to a decrement of bandgap and electron affinity in Hf1-xZrxO2. Both ΔEv and ΔEc are all above 1 eV, which is large enough to block electrons and holes for carrier transport in channel regions for the Hf1-xZrxO2 based transistors. The band alignment for Hf0.52Zr0.48O2/Si0.55Ge0.45 was also investigated exhibiting a much larger ΔEv and a slightly lower ΔEc as compared to Hf0.52Zr0.48O2/Si.
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