Abstract
Germanium (Ge) negative capacitance field-effect transistors (NCFETs) with various Zr compositions in Hf1−xZrxO2 (x = 0.33, 0.48, and 0.67) are fabricated and characterized. For each Zr composition, the NCFET exhibits the sudden drop in some points of subthreshold swing (SS), which is induced by the NC effect. Drive current IDS increases with the increase of annealing temperature, which should be due to the reduced source/drain resistance and improved carrier mobility. The steep SS points are repeatable and stable through multiple DC sweeping measurement proving that they are induced by the NC effect. The values of gate voltage VGS corresponding to steep SS are consistent and clockwise IDS-VGS are maintained through the multiple DC sweeps. At fixed annealing temperature, NC device with Hf0.52Zr0.48O2 achieves the higher IDS but larger hysteresis compared to the other compositions. NCFET with Hf0.67Zr0.33O2 can obtain the excellent performance with hysteresis-free curves and high IDS.
Highlights
The ferroelectric negative capacitance field-effect transistor (NCFET) with a ferroelectric film inserted into gate stack is a promising candidate for the low-power dissipation applications owing to its ability to overcome the fundamental limitation in subthreshold swing (SS) for the conventional metal-oxide-semiconductor field-effect transistor (MOSFET) [1]
It is observed that NCFETs achieve the improved SS characteristics compared to the control device
The VTH and IDS of the Hf1−xZrxO2 NCFET are greatly affected by the annealing temperature
Summary
The ferroelectric negative capacitance field-effect transistor (NCFET) with a ferroelectric film inserted into gate stack is a promising candidate for the low-power dissipation applications owing to its ability to overcome the fundamental limitation in subthreshold swing (SS) for the conventional metal-oxide-semiconductor field-effect transistor (MOSFET) [1]. The negative capacitance (NC) phenomena in NCFETs have been extensively studied in different channel materials, including silicon (Si) [2, 3], germanium (Ge) [4], germanium-tin (GeSn) [5], III–V [6], and 2D materials [7]. The NC characteristics have been demonstrated in NCFETs with various ferroelectrics, such as BiFeO3 [8], PbZrTiO3 (PZT) [9], PVDF [10], and Hf1−xZrxO2 [11]. Experimental studies have shown that the electrical performance of NCFETs can be optimized.
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