Band alignment of lattice-matched InGaPN/GaAs and GaAs/InGaPN quantum wells grown by MOVPE

Abstract

The band alignment of nearly lattice-matched In 0.528Ga 0.472P 1− y N y /GaAs and GaAs/In 0.528Ga 0.472P 1− y N y quantum wells with N content of y=0.027 on GaAs (0 0 1) substrates grown by metalorganic vapor phase epitaxy were studied using low-temperature and temperature dependent photoluminescence (PL). Low temperature (10 K) PL shows the emission ( E PL,QW) in the infrared region which related to sample’s structures. For GaAs/In 0.528Ga 0.472P 0.973N 0.027 QW, the E PL,QW emission was observed at temperature up to 260 K. The results reveal that the In 0.528Ga 0.472P 0.973N 0.027/GaAs and GaAs/In 0.528Ga 0.472P 0.973N 0.027 quantum wells exhibit a type-II quantum structure. Valence band offset Δ E V as large as 450 meV was estimated for GaAs/In 0.528Ga 0.472P 0.973N 0.027 quantum well while the conduction band offset Δ E C was estimated to be 160 meV for In 0.528Ga 0.472P 0.973N 0.027/GaAs quantum well. This type-II quantum structures refer to the natural type-II band alignment between In x Ga 1− x P 1− y N y ( x=0.528, y=0.027) and GaAs, which is useful for separation electrons and holes in the electronic and photovoltaic applications.