Abstract
X-ray photoelectron spectroscopy has been used to measure the band alignment the In2Se3 multilayers (MLs)/ZnO heterojunction. The MLs In2Se3 was fabricated by pulse laser deposition (PLD) on ZnO/Al2O3 substrates. The valence-band offset (ΔEv) of In2Se3 MLs/ZnO is determined to be 2.19 ± 0.1 eV, and the conduction-band offset (ΔEc) is deduced to be 0.96 ± 0.1 eV, indicating that In2Se3-MLs/ZnO heterojunction has a type-II band alignment.
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