Abstract
Single-oriented CuGaO2 films have been successfully grown on β-Ga2O3 (2¯01) substrate by reactive deposition epitaxy. The energy band offsets and alignment at CuGaO2/β-Ga2O3 heterojunction are investigated by x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). A type-II band alignment is identified at CuGaO2/β-Ga2O3 heterojunction with valence band offset (VBO) of 1.63 eV and conduction band offset (CBO) of 0.45 eV. The CuGaO2/β-Ga2O3 heterojunction based ultraviolet photodetector is prepared which exhibits an obvious ultraviolet (UV) photoresponse at zero bias voltage. The combination between β-Ga2O3 and wide bandgap delafossite oxide semiconductor may open up possibilities for next generation self-power deep UV optoelectronic devices in future.
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