Abstract
Photoluminescence peak energy shifts under applied [110] and [100] uniaxial stress are interpreted within the framework of a multi-band Kohn–Luttinger model which takes into account the mixing of heavy, light, and spin-orbit split-off holes within the valence band. Experimental data are presented for 0.5%, 1%, and 1.7% Si1−yCy/Si samples which are best fitted with a conduction band offset of approximately 70%. At this value of the conduction band offset, we show that small amounts of space charge induced band bending are required to explain the experimentally observed results.
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