Abstract
Photoluminescence (PL) measurements have been used to examine the influence which the proximity of the sample surface bears on the radiative recombination occurring within a near-surface quantum well (QW). The InxGa1−xAs/GaAs system exhibits dramatic attenuation in PL intensity for surface barriers below 75 Å in thickness, without any significant shift in PL peak energy. However, as the GaAs surface barrier is reduced to zero, both In0.26Ga0.74As/GaAs and In0.1Ga0.9As/GaAs QWs reveal the development of an additional PL feature at an energy which coincides with that expected for direct band-to-band recombination within the strained InxGa1−xAs layer. PL measurements for chemically etched Al0.3Ga0.7As/GaAs near-surface QWs also show a lack of shift in PL peak energy, as the outer layer is thinned gradually.
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