Abstract
Band offsets at ZnO/PbSe heterostructure interfaces are determined by synchrotron radiation photoelectron spectroscopy. A type-I band alignment with the valence band offset (VBO) ΔEV = 0.73 eV and conduction band offset (CBO) ΔEC = 2.36 eV is concluded for ZnO/PbSe film heterojunctions. The approach is extended to ZnO/PbSe nanocrystal (NC) heterojunctions, which reveals that band alignment can be adjusted via varying the dot size and a type-II alignment is formed when the dot size is ⩽5 nm. The small conduction band offset of the ZnO/PbSe film heterojunction and the tunable band alignment of the ZnO/PbSe NCs heterojunction with different crystal sizes shall benefit the design and fabrication of improved optoelectronic devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
