Abstract
Ballistic emission electron and X-ray photoelectron emission microscopy studies are presented for the sulfur-passivated Pt–GaP(001) buried metal–semiconductor interface. The topographic/ballistic images showed that the roughness of the metal–semiconductor samples after sulfur passivation and Pt deposition is higher than in the as-received substrate. The photoelectron emission microscope microimages showed a significant inhomogeneity as far as the interface chemical environment is concerned. The strongest inhomogeneity appeared to be related to the gallium, and these variations have a subtle effect on the P and Pt signals. These complementary techniques enabled us to correlate the surface topography and the interface transport variations, with the spatially resolved chemical information of the buried Pt–GaP metal–semiconductor interface.
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