Abstract
This work will review the development of 2D/3D device simulators based on the Non-Equilibrium Green Function (NEGF) formalism, which has been developed in order to study variability issues. We have concentrated on the variability deriving from the particular arrangement of dopants, unintentional defects and roughness of the Si/SiO2 interface. The device simulators developed have the capability to address very strong local potential inhomogeneities that stem from discrete dopants. We have implemented volume discretisation techniques that allow us a more precise representation of interfaces and dopant localization. The simulators have been parallelized and recursive algorithms have been implemented in order to reduce the computational time, which is a killer effect in the Poisson-NEGF loop in a 3D quantum simulator. The simulator is designed for an effective mass tensor approximation. Finally, we have carried out studies of the performance of nanotransistors due to the effect of the discreteness of dopant and interface roughness
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