Abstract
We report ballistic hole conduction in 2μm long GaAs quantum wires of nominal cross-section 15 nm by 15 nm. In each of eight test wires, we observe several quantized conduction steps of approximate height 0.77e2∕h. The wires were fabricated using the cleaved edge overgrowth molecular-beam epitaxy process, and the modulation-doped acceptors were incorporated using a carbon filament as the source of atomic carbon.
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