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https://doi.org/10.1007/978-1-4684-7412-1_27
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Cite Publication Date: Jan 1, 1990 |
Affiliation: Cavendish Hospital
The use of the high mobility electron gas in modulation doped GaAs-AlGaAs heterojunctions allows the fabrication of a range of structures whose size is less than the mean free path for electron scattering. This particular combination results in ballistic transport where the electron traverses the sample without scattering.
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