Abstract
We have theoretically studied the ballistic electron transport in a ferromagnet/two-dimensional electron gas structure, which could be experimentally realized by depositing a magnetic metallic stripe on the top or bottom of a modulation-doped semiconductor heterostructure. The hybrid structure based on an electrical barrier with inversely proportional function and two magnetic barriers with parallel or antiparallel configurations performs high spin polarization, which strongly depends on the incident electron energy, the incident wave vector parallel to the barrier and the height of the electric potential. In addition, our numerical results show that the magneto-conductance of this structure can be strongly modulated by adjusting the incident electron energy or the electric potential.
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