Abstract
Ballistic electron transport in macroscopic four-terminal devices with a high electron mobility is studied. The bend resistance characteristics are well analyzed using the Landauer-Büttiker formula although the leads are too wide to form well-defined one-dimensional subbands. The ballistic length determined from this analysis agrees well with the mean free path deduced from a mobility and electron density. Transmission and reflection of ballistic electrons are manipulated using a strip gate placed so as to bisect the device. The transmission and reflection probabilities are determined as a function of gate voltage, and related to the change in the refraction of ballistic electron propagation across the regions of different electron densities.
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