Bend-resistance characteristics of macroscopic four-terminal devices with a high electron mobility.

Abstract

Bend-resistance characteristics are studied for four-terminal ballistic devices with a high electron mobility on a macroscopic scale of order 10--100 \ensuremath{\mu}m. The negative bend resistance induced by ballistic electron transport is quantitatively reproduced by the Landauer-Bu\ifmmode\ddot\else\textasciidieresis\fi{}ttiker formula in the classical limit for various device sizes and electron densities. Using this formula, we determine the ballistic electron length as a function of electron density, which compares well with the elastic mean free path deduced from the electron mobility and electron density.