Abstract
Ballistic electron emission microscopy (BEEM) was used to study the Au/GaAs(110) interface, where the GaAs(110) surface was prepared by cleaving. We were able to prepare Schottky barriers characterized by a high homogeneity. Moreover, the interface, formed on the (110) cleavage plane of a GaAs(100) wafer, transmits ballistic electrons for months without any significant deterioration in contrast to the Schottky barriers prepared on chemically cleaned GaAs(100).
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