Abstract
Signal-to-noise ratios for a backward and a point contact diode were investigated as a function of incident amplitude modulated microwave power. Measurements were made for a 30 kHz modulated carrier at 10 GHz. Comparison of the results reveals a gain of at least 10 dB in ultimate sensitivity for the backward diode over the point contact diode. In addition, the beneficial effect of an external dc bias could be substantiated.
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