Abstract
The results of investigation into the imaging of grooves in silicon with a trapezoidal profile and small side-wall inclination angles, which are obtained using a scanning electron microscope operating in the backscattered electron recording mode, are presented. It is shown that there exist four imaging mechanisms. The first of them is caused by primary electrons of the probe. The next two are related to the multiple scattering of primary and secondary (ionizing) electrons. The fourth mechanism is associated with the interaction between electrons released into free space and the sample relief. The first three mechanisms provide direct image contrast, and the fourth is characterized by opposite contrast.
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