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https://doi.org/10.1109/irmmw-thz.2019.8873787
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Cite Publication Date: Sep 1, 2019 |
We present a method for background-free spectroscopy of shallow impurity transitions in semiconductors with residual impurity concentrations. The method is based on a continuous wave terahertz photomixer source and a scheme for optically modulating the concentration of neutral impurities.
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