Abstract
We report the demonstration of high-performance long-wavelength infrared (LWIR) nBn photodetectors based on InAs/InAs1− xSbx type-II superlattices. A new saw-tooth superlattice design was used to implement the electron barrier of the photodetectors. The device exhibited a cut-off wavelength of ∼10 μm at 77 K. The photodetector exhibited a peak responsivity of 2.65 A/W, corresponding to a quantum efficiency of 43%. With an R × A of 664 Ω·cm2 and a dark current density of 8 × 10−5 A/cm2, under −80 mV bias voltage at 77 K, the photodetector exhibited a specific detectivity of 4.72 × 1011 cm·Hz/W and a background–limited operating temperature of 110 K.
Highlights
Type-II strained-layer superlattices (T2SLs) have become an increasingly active topic of research since their conception by Sai-Halasz et al.[1]
Tremendous effort has been spent on developing sensitive infrared photodetectors based on InAs/InAs1 xSbx T2SLs; these photodetectors are still facing many challenges, especially in the long-wavelength infrared (LWIR), and have only shown limited performance in recent reports.[8,9,10]
LWIR detection is important because the ambient temperature of a scene, for ground-based applications, is around 300 K, where the emission peak is ∼9.8 μm–at the center of the LWIR atmospheric transmission window; this leads to a demand for sensitive LWIR photodetectors
Summary
Type-II strained-layer superlattices (T2SLs) have become an increasingly active topic of research since their conception by Sai-Halasz et al.[1]. Background–limited long wavelength infrared InAs/InAs1−xSbx type-II superlattice-based photodetectors operating at 110 K
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