Abstract
In this paper, we extend the concept of back surface recombination through a study of a silicon mono facial solar cell in static regime and under polychromatic illumination. Back surface recombination velocities noted Sbe, Sbj and Sbr are determined for which respectively we derived, the power, the fill factor and the conversion efficiency, that become constant whatever the thickness of the solar cell. We have then obtained the expression of the minority carrier’s density in the base from the continuity equation. We then have determined the photocurrent density, the photo voltage, the power, the fill factor and finally the conversion efficiency.
Highlights
Today one of the main objectives in the domain of the photovoltaic energy is to improve the solar cell efficiency and to reduce the manufacturing cost
We propose in this paper, to study the effect of both the solar cell thickness and the back surface recombination velocity, through the carrier density, the photocurrent density, the photovoltage, the power, the fill factor and the conversion efficiency
We plot on the curves 4 and 5, the profile of the photocurrent density versus junction recombination velocity ( Sf ) respectively for a given thickness H and for different Sb values
Summary
Today one of the main objectives in the domain of the photovoltaic energy is to improve the solar cell efficiency and to reduce the manufacturing cost. The conversion efficiency in photovoltaic solar is in the order of 20% in the laboratories but only in the order of 17% to the commercial level. This objective has to optimize the solar cell thickness (H) and the recombination parameters in the bulk and surfaces. We propose in this paper, to study the effect of both the solar cell thickness and the back surface recombination velocity, through the carrier density, the photocurrent density, the photovoltage, the power, the fill factor and the conversion efficiency. When the solar cell is illuminated by the emitter front side
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