Back-End-of-Line-Based Resistive RAM in 0.13 μ m Partially-Depleted Silicon-on-Insulator Process for Highly Reliable Irradiation- Resistant Application

Abstract

We demonstrated a resistive random access memory (RRAM) based embedded non-volatile memory (e-NVM) solution integrated in the 0.13 μm partially depleted silicon on insulator (PD-SOI) process. The memory devices show excellent reliability. It has good endurance up to <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> electrical cycles without any degradation in low resistance state (LRS) and high resistance state (HRS). It can retain the data up to <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> s even at 125 °C. Both the LRS and HRS show little variation. After γ-ray radiation with various total ionizing doses (TIDs), the memory characteristics of the device including resistance states, set/reset voltages are not significantly degraded, suggesting good anti-radiation capability. The proposed 1T1R device integrated in SOI process provides a potential candidate for those applications in radiation environments.