Abstract
The Feature Article by Jarjour et al. (p. 2510) reviews the progress made so far towards the development of optically excited and electrically driven single photon sources based on nitride-based single quantum dots. The back cover picture illustrates the emission of single photons in the blue region of the spectrum from an InGaN/GaN quantum dot under nonlinear optical excitation in the near infrared. The atomistic structure of an InGaN quantum dot embedded in a GaN barrier was used in the atomistic simulation of the electronic structure of these quantum dots. The correlation measurements shown in the graph demonstrate the single-photon nature of the emission.
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