Back channel etch chemistry of advanced a-Si:H TFTs

Abstract

We report on the effects of back channel etch depth and etchant chemistry on the electrical characteristics of inverted staggered advanced amorphous silicon thin-film transistors. We found that the optimum amorphous silicon film thickness in the channel is about 800–1100Å. Three dry etch, HBr+Cl2, C2F6, and CCl2F2+O2, and one wet etch, KOH, chemistries are used for the back channel etch processing. We established that dry etch can be used for the back channel etch of amorphous silicon transistor without degrading its electrical characteristics.