Abstract
BaBiO3 is presented as a potential absorber for all-oxide solar cells. Thin-films of BaBiO3 were deposited by pulsed laser deposition. As-deposited thin-films were amorphous, but a rapid thermal anneal at 600°C for 10min yields polycrystalline thin-films. X-ray photoelectron spectroscopy measurements show that deposited films have Barium in Ba+2 state and bismuth in both Bi+3 and Bi+5 state. UV–Vis spectrophotometer (UV–Vis) shows that BaBiO3 films have direct and indirect bandgap (Eg) of 2.25eV and 2.02eV respectively, while ultraviolet photoelectron spectroscopy (UPS) shows that valence band maxima (EV), conduction band minima (EC) and work-function (ϕ) of BaBiO3 is at 5.82eV, 3.8eV and 4.22eV respectively. BaBiO3 thin-film devices with a FTO/c-TiO2/BaBiO3/Au structure show rectifying current–voltage characteristics in dark. Under illumination, a photo response with a Jlight/Jdark ratio of 1.75 is observed.
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