Abstract
ABSTRACT We present the correlation between film fabrication conditions (crystallization temperatures), microstructure, and dielectric phase shift of Ba1−xSrxTiO3 (BST) thin films synthesized by metal organic solution deposition (MOSD) on sapphire substrates. The structure, microstructure, surface morphology, and composition of the films were assessed by glancing angle X-ray diffraction (GAXRD), atomic force microscopy (AFM), and Rutherford backscattering spectroscopy (RBS). The dielectric phase shift measurements were carried out using coplanar waveguide (CPW) test circuits over a frequency range of 2–18 GHz. Our results indicate that BST processed at 950°C achieved large relative phase shift response with low attenuation of the microwave signal.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
