Abstract
ABSTRACT We present the correlation between film fabrication conditions (crystallization temperatures), microstructure, and dielectric phase shift of Ba1−xSrxTiO3 (BST) thin films synthesized by metal organic solution deposition (MOSD) on sapphire substrates. The structure, microstructure, surface morphology, and composition of the films were assessed by glancing angle X-ray diffraction (GAXRD), atomic force microscopy (AFM), and Rutherford backscattering spectroscopy (RBS). The dielectric phase shift measurements were carried out using coplanar waveguide (CPW) test circuits over a frequency range of 2–18 GHz. Our results indicate that BST processed at 950°C achieved large relative phase shift response with low attenuation of the microwave signal.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
