Abstract
Axial channeling radiation from MeV electrons in Si resulting from spontaneous transitions between transverse energy states is studied theoretically and experimentally. Transitions between tightly bound states are well described within the single-string approximation with a thermally averaged Hartree-Fock continuum potential. This applies both for line energies and for absolute intensities as functions of incidence direction for the electron beam. For weakly bound states the extension of the calculations to describe itinerant states in the tight-binding approximation reproduces the band widths obtained from more complete many-beam calculations. For a thick crystal the discrete lines are Lorentzians with widths determined by incoherent scattering, whereas the finite crystal thickness modifies the line shape and the line width in thinner specimens. For tightly bound states the incoherent scattering is due to thermal displacements of atoms, and the formula presented for the scattering probabilities gives satisfactory agreement with observed line widths when correlations of displacements are included.
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