Abstract
In this paper, single pulse unclamped inductive switching (UIS) test of Wolfspeed Gen-3 10 kV, 15 A 4H-SiC MOSFETs is performed for four operating conditions at room temperature. The avalanche energy is observed to be around 7.0 J. The measured values are in good agreement with expected behavior, which may be extrapolated beyond the experimentally measured range. Failure analysis was conducted after each device failure to observe the failure locations. Avalanche parameters of SiC MOSFETs with various voltage ratings are compared. The avalanche energy of the Gen-3 10 kV, 15 A 4H-SiC MOSFETs is obtained to be superior to earlier generations of 10 kV SiC MOSFETs.
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