Abstract
Excess noise has been generated in the 75-115 GHz band, by reverse biasing GaAs Schottky barrier diodes into avalanche breakdown. Diodes with lower epi-layer doping yield lower excess noise, but provide stable avalanche noise, and are less liable to generate excess mixer noise. A sharp reverse bias characteristic appears to be a precondition for a stable avalanche noise output.
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More From: IEEE Transactions on Microwave Theory and Techniques
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