Abstract
The avalanche injection in silicon gate-controlled diodes is analysed in terms of the physical theory of hot electrons in silicon as developed by Bartelink, Moll and Meyer. Numerically computed universal plots are given for the calculation of the hot-carrier injection ratio ηi (gate current over junction current) at given maximum interface electric field at breakdown, \\mathscrE. \\mathscrE=1.4×106 V/cm is experimentally determined, which is substantially higher than previously reported values. ηi≈2×10-3 is measured, in good agreement with the calculated value.
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