Abstract
Breakdown voltages have been calculated for abrupt p-n junctions in the nine III-V semiconductors of AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, and InSb. Parameters needed in the breakdown voltage calculations such as the mean free path for scattering and the average phonon loss have been evaluated using a Monte Carlo transport calculation at electric field values characteristic of breakdown.
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